FQPF10N20

200V N沟道MOSFET 200V N-Channel MOSFET

Description

This N-Channel enhancement mode power field effect transistors are produced using Semiconductor’s proprietary planar stripe, DMOS technology.

Features

• 6.8 A, 200 V, RDSon= 0.36 ΩMax. @ VGS= 10 V

• Low Gate Charge Typ. 13.5 nC

• Low Crss Typ. 13 pF

• 100% Avalanche Tested

• Improved dv/dt capability

立创商城:
N沟道 200V 6.8A

艾睿:
Trans MOSFET N-CH 200V 6.8A 3-Pin3+Tab TO-220F Rail

FQPF10N20 PDF数据文档