MTP50P03HDLG

P沟道TO-220AB-3封装场效应管

The is a -30V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. The MOSFET is ideal for low voltage, high speed switching applications in power supplies, converters and PWM motor controls. It is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

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Avalanche energy specified

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Source to drain diode recovery time comparable to a discrete fast recovery diode

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Diode is characterized for use in bridge circuits