T1G4020036-FL

射频结栅场效应晶体管RF JFET晶体管 DC-3.5GHz GaN 2X 120W 36Volt

The TriQuint is a 240 W Peak 48 W Avg. P3dB discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint"s proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.