IXTP3N60P

IXYS SEMICONDUCTOR  IXTP3N60P  功率场效应管, MOSFET, N沟道, 3 A, 600 V, 2.9 ohm, 10 V, 5.5 V

The is a PolarHV™ N-channel enhancement-mode Power MOSFET features avalanche rated and low package inductance.

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International standard package

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Unclamped inductive switching UIS rated

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Easy to mount

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Space savings

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High power density