LTC1155CS8#PBF

LINEAR TECHNOLOGY  LTC1155CS8#PBF  双路驱动器芯片, MOSFET, 高压侧, 4.5V-18V电源, 26µs延迟, SOIC-8

The is a dual high-side Gate Driver allows using N-channel FETs for high-side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micro-power operation with 8µA standby current and 85µA operating current allows use in virtually all systems with maximum efficiency. Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps. The LTC1155 operates off of a 4.5 to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage battery-powered applications, particularly where micro-power sleep operation is required.

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Short-circuit protection

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Controlled switching ON and OFF times

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No external charge pump components

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Replaces P-channel high-side MOSFETs

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Compatible with standard logic families

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Fully enhances N-channel power MOSFETs