3SK263-5-TG-E

Trans RF MOSFET N-CH 15V 0.03A Automotive 4Pin CP T/R

By using a combination of metal-oxide-semiconductor technology, this RF amplifier from can be implemented in an electronic circuit as a switching device. Its maximum power dissipation is 200 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This RF power MOSFET has an operating temperature range of -55 °C to 150 °C. This N channel RF power MOSFET operates in depletion mode.