MJE243
互补硅功率晶体管塑料 Complementary Silicon Power Plastic Transistors
The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
Features
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- High Collector-Emitter Sustaining Voltage -
VCEOsus = 100 Vdc Min , MJE253
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- High DC Current Gain @ IC = 200 mAdc
hFE = 40-200
hFE = 40-120 - MJE243, MJE253
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- Low Collector-Emitter Saturation Voltage -
VCEsat = 0.3 Vdc Max @ IC = 500 mAdc
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- High Current Gain Bandwidth Product -
fT = 40 MHz Min @ IC = 100 mAdc
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- Annular Construction for Low Leakages
ICBO = 100 nAdc Max @ Rated VCB
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- Pb-Free Packages are Available