SI1902DL-T1-E3

VISHAY  SI1902DL-T1-E3  双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.32 ohm, 4.5 V, 1.5 V

The is a dual N-channel MOSFET intended for small-signal applications where a miniaturized package is needed and low levels of current around 250mA need to be switched, either directly or by using a level shift configuration. It offers improved ON-resistance value and enhanced thermal performance.

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±12V Gate to source voltage

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1A Pulsed drain current