FQP85N06

QFET® N 通道 MOSFET，超过 31A，Fairchild SemiconductorFairchild Semiconductor 的新型 QFET® 平面 MOSFET 使用先进的专利技术为广泛的应用提供最佳的工作性能，包括电源、PFC（功率因数校正）、直流－直流转换器、等离子显示面板 PDP、照明镇流器和运动控制。 它们通过降低导通电阻 RDSon 来减少通态损耗，并通过降低栅极电荷 Qg 和输出电容 Coss 来减少切换损耗。 通过使用先进的 QFET® 工艺技术，Fairchild 可提供比竞争平面 MOSFET 设备更高的品质因素 FOM。### MOSFET 晶体管，Fairchild SemiconductorFairchild 提供大量 MOSFET 设备组合，包括高电压 >250V 低电压 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。

The from is a through hole, 60V N channel enhancement mode power QFET MOSFET in TO-220 package. This device features planar stripe and DMOS technology which has been especially tailored to minimize the onstate resistance and provide superior switching performance and high avalanche energy strength. It is suitable for switch mode power supply, audio amplifier, DC motor control and variable switching power applications.

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Low gate charge typically 86nC

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Low reverse transfer capacitance of typically 165pF

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Drain to source voltage Vds of 60V

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Gate to source voltage of ±25V

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Continuous drain current Id of 85A

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Power dissipation Pd of 160W

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Low on state resistance of 800mohm at Vgs 10V

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Operating temperature range -55°C to 175°C