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CDNBS16-T03

CDNBS16 - T03 〜 T36C - TVS二极管阵列系列 CDNBS16-T03~T36C - TVS Diode Array Series

23V 夹子 43A(8/20µs) Ipp TVS - 表面贴装型 16-SOIC


得捷:
TVS DIODE 3VWM 23VC 16SOIC


立创商城:
CDNBS16-T03


艾睿:
Save yourself hassle by equipping your device with Bourns&s; CDNBS16-T03 TVS diode which will react to sudden or momentary overvoltage conditions. Its peak pulse power dissipation is 500 W. This device&s;s maximum clamping voltage is 23 V and minimum breakdown voltage is 4.5 V. Its maximum leakage current is 125 μA. Its test current is 1 mA. This TVS diode has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
This Transient Voltage Suppressor Array diodes are for surge and ESD protection applications, in 16 Lead Narrow Body SOIC package size format. The Transient Voltage Suppressor Array offers a voltage of 3 V in unidirectional configurations. The Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration minimizes roll away.The device will meet IEC 61000-4-2 ESD, IEC 61000-4-4 EFT and IEC 61000-4-5 Surge requirements.


Chip1Stop:
Diode TVS Octal Uni-Dir 3V 500W 16-Pin SOIC N


CDNBS16-T03 PDF数据文档
图片 型号 厂商 下载
CDNBS16-T03 Bourns J.W. Miller 伯恩斯
CDNBS08-T12C Bourns J.W. Miller 伯恩斯
CDNBS08-SRDA3.3-4 Bourns J.W. Miller 伯恩斯
CDNBS08-SLVU2.8-4 Bourns J.W. Miller 伯恩斯
CDNBS08-SLVU2.8-8 Bourns J.W. Miller 伯恩斯
CDNBS04-B08800 Bourns J.W. Miller 伯恩斯
CDNBS04-B08600 Bourns J.W. Miller 伯恩斯
CDNBS04-B08400 Bourns J.W. Miller 伯恩斯
CDNBS04-B08200 Bourns J.W. Miller 伯恩斯
CDNBS08-T58CC Bourns J.W. Miller 伯恩斯
CDNBS08-SRDA05-4 Bourns J.W. Miller 伯恩斯