F3L400R12PT4B26BOSA1
晶体管, IGBT阵列&模块, N沟道, 600 A, 1.75 V, 2.15 kW, 1.2 kV, Module
Summary of Features:
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- Extended Operation Temperature T vj op
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- Low Switching Losses
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- Low V CEsat
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- T vj op = 150°C
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- V CEsat with positive Temperature Coefficient
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- Isolated Base Plate
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- Compact Design
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- Standard Housing
Benefits:
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- Compact Modules
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- Easy and most reliable assembly
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- No Plugs and Cables required
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- Ideal for Low Inductive System Designs