MA2SD100GL
•肖特基势垒二极管(SBD)•硅外延平面型•超高速开关•(平均)正向电流IF(AV)= 200MA•低正向电压VF•高密度安装
反向电压VrReverse Voltage| 20V \---|--- 平均整流电流IoAVerage Rectified Current| 200mA/0.2A 最大正向压降VFForward VoltageVf | 470mV/0.47V 最大耗散功率PdPower dissipation| Description & Applications| • Schottky Barrier Diodes SBD • Silicon epitaxial planar type • For super high speed switching • Forward current Average IFAV= 200 mA rectification is possible • Low forward voltage VF • High-density mounting is possible 描述与应用| •肖特基势垒(SBD) •硅外延平面型 •超高速开关 •(平均)正向电流IF(AV)= 200MA •低正向电压VF •高密度安装