BSC080P03LSGAUMA1

INFINEON  BSC080P03LSGAUMA1  场效应管, MOSFET, P沟道, -30V, -30A, TDSON-8

OptiMOS™P P 通道功率 MOSFET

**Infineon** **OptiMOS**™ P 通道电源 MOSFET 设计用于提供增强功能，以便达到质量指标。 特征包括超低切换损耗、通态电阻、雪崩额定值以及达到汽车解决方案的 AEC 标准。 应用包括：直流-直流、电动机控制、汽车和 eMobility。

增强型模式

雪崩等级

低切换和传导功率损耗

无铅引线电镀；符合 RoHS 标准

标准封装

OptiMOS™ P 通道系列：温度范围为 -55°C 至 +175°C

得捷:
MOSFET P-CH 30V 16A/30A TDSON-8

欧时:
Infineon OptiMOS P 系列 Si P沟道 MOSFET BSC080P03LSGAUMA1, 30 A, Vds=30 V, 8引脚 TDSON封装

贸泽:
MOSFET SMALL SIGNAL+P-CH

e络盟:
晶体管, MOSFET, BRT, P沟道, -30 A, -30 V, 0.0061 ohm, -10 V, -1.5 V

艾睿:
As an alternative to traditional transistors, the BSC080P03LSGAUMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET P-CH 30V 16A 8-Pin TDSON T/R

TME:
Transistor: P-MOSFET; unipolar; -30V; -30A; 89W; PG-TDSON-8

Verical:
Trans MOSFET P-CH 30V 16A Automotive 8-Pin TDSON EP T/R

Newark:
# INFINEON  BSC080P03LSGAUMA1  MOSFET, P CH, -30V, -30A, TDSON-8