IXFR26N50

Trans MOSFET N-CH 500V 26A 3Pin3+Tab ISOPLUS 247

Electrically Isolated Back Surface

N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family

Features

• Silicon chip on Direct-Copper-Bond substrate

\- High power dissipation

\- Isolated mounting surface

\- 2500V electrical isolation

• Low drain to tab capacitance<50pF

• Low RDS onHDMOS™ process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching UIS rated

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode power supplies

• DC choppers

• AC motor control