SFH4716A
红外发射器, 860 nm, 150 °, SMD, 150 mW/Sr, 11 ns, 14 ns
The from Osram is an OSLON black series high efficiency 850nm, 150°, high power infrared emitter. This has low thermal resistance maximum 10K/W and superior corrosion robustness. The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, stress test qualification for automotive grade discrete semiconductors. It has 11/14ns rise and fall time of Ie 10% and 90% of Ie max IF = 2A, RL = 50 ohm, 1.65V <= 2.1V forward voltage IF = 1A, tp = 10ms, 1.75V <= 2.3V forward voltage IF = 1.5A, tp = 100µs, 1.9V <= 2.5V forward voltage IF = 2A, tp = 100µs. The temperature coefficient of Ie or Φe IF = 1A, tp = 10ms is -0.3%/K, temperature coefficient of VF IF = 1A, tp = 10ms is -1mV/K, temperature coefficient of wavelength IF = 1A, tp = 10ms is 0.3nm/K. It is suitable for use in driver monitoring /seat occupancy detection, eye tracking, gaming, amusement, gambling, safety and security, CCTV.
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- 150 >= 100mW/sr radiant intensity at IF= 1A, tp= 10ms, IR light source with high efficiency
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- 5V reverse voltage, 1500mA forward current, 2A surge current tp = 5ms, D = 0
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- Power consumption Ptot is 3.5W
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- ESD withstand voltage is 2KV according to ANSI/ ESDA/ JEDEC JS-001 - HBM
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- 860nm peak wavelength IF = 1A, tp = 10ms
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- 850nm centroid wavelength IF=1A, tp=10ms, 30nm spectral bandwidth at 50% of Imax IF=1A, tp=10ms
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- Total radiant flux is 1090mW IF = 1.5A, tp= 100µs/740mW IF=1A, tp= 10ms
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- ±75° half angle, dimensions of active chip area is 1mm x 1mm L x W
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- Operating temperature range from -40°C to 125°C
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- Radiant intensity IF = 1.5A, tp = 100µs is 220mW/sr