IXGH48N60B3D1

Trans IGBT Chip N-CH 600V 48A 300000mW 3Pin3+Tab TO-247

IGBT PT 600 V 300 W 通孔 TO-247AD

得捷:
IGBT 600V 300W TO247

艾睿:
Minimize the current at your gate with the IXGH48N60B3D1 IGBT transistor from Ixys Corporation. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 300000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Verical:
Trans IGBT Chip N-CH 600V 48A 300000mW 3-Pin3+Tab TO-247

Win Source:
IGBT 600V 300W TO247