K6R1016V1D-TC08

64Kx16 Bit High-Speed CMOS Static RAM3.3V Operating Operated at Commercial and Industrial Temperature Ranges.

64Kx16 Bit High-Speed CMOS Static RAM3.3V Operating Operated at Commercial and Industrial Temperature Ranges.

GENERAL DESCRIPTION

The K6R1004V1D is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004V1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1004V1D is packaged in a 400 mil 32-pin plastic SOJ.

FEATURES

• Fast Access Time 8,10nsMax.

• Low Power Dissipation

   Standby TTL : 20mAMax.

              CMOS : 5mAMax.

   Operating  K6R1004V1D-08: 80mAMax.

K6R1004V1D-10: 65mAMax.

• Single 3.3±0.3V Power Supply

• TTL Compatible Inputs and Outputs

• Fully Static Operation

\- No Clock or Refresh required

• Three State Outputs

• Center Power/Ground Pin Configuration

• Standard Pin Configuration :

   K6R1004V1D-J : 32-SOJ-400

   K6R1004V1D-K : 32-SOJ-400 Lead-Free

• Operating in Commercial and Industrial Temperature range.