SPD03N60S5BTMA1

DPAK N-CH 600V 3.2A

表面贴装型 N 通道 3.2A（Tc） 38W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 600V 3.2A TO252-3

贸泽:
MOSFET LOW POWER_LEGACY

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The SPD03N60S5BTMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 38000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This device is made with coolmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Verical:
Trans MOSFET N-CH 600V 3.2A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 600V 3.2A TO-252