IPA180N10N3GXKSA1

Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPA180N10N3GXKSA1, 28 A, Vds=100 V, 3引脚 TO-220FP封装

OptiMOS™3 功率 MOSFET，100V 及以上

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPA180N10N3GXKSA1, 28 A, Vds=100 V, 3引脚 TO-220FP封装

得捷:
MOSFET N-CH 100V 28A TO220-FP

艾睿:
This IPA180N10N3GXKSA1 power MOSFET from Infineon Technologies can be used for amplification in your circuit. Its maximum power dissipation is 30000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 100V 28A 3-Pin3+Tab TO-220FP

Verical:
Trans MOSFET N-CH 100V 28A Automotive 3-Pin3+Tab TO-220FP Tube

Win Source:
MOSFET N-CH 100V 28A TO220-FP