IRF620B

200V N沟道MOSFET 200V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

Features

• 5.0A, 200V, RDSon= 0.8Ω@VGS= 10 V

• Low gate charge typical 12 nC

• Low Crss typical 10 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability