IXFN360N10T

IXFN 系列 单通道 N 沟道 100 Vds 2.6 mOhm 830 W 功率 MOSFET - SOT-227B

N-Channel 100V 360A Tc 830W Tc Chassis Mount SOT-227B

得捷:
MOSFET N-CH 100V 360A SOT-227B

欧时:
MOSFET 360A 100V SOT227

艾睿:
Use Ixys Corporation&s;s IXFN360N10T power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 830000 mW. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

Chip1Stop:
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B

Verical:
Trans MOSFET N-CH 100V 360A 4-Pin SOT-227B