MJW16212

Trans GP BJT NPN 650V 10A 3Pin3+Tab TO-247AE

SCANSWITCH NPN Bipolar Power Deflection Transistor

For High and Very High Resolution Monitors

The is a state–of–the–art SWITCHMODEbipolar power transistor. It isspecifically designed for use in horizontal deflectioncircuits for 20 mm diameter neck, high and very high resolution, full page, monochrome monitors.

• 1500 Volt Collector–Emitter Breakdown Capability

• Typical Dynamic Desaturation Specified New Turn–Off Characteristic

• Application Specific State–of–the–Art Die Design

• Fast Switching:

  200 ns Inductive Fall Time Typ

  2000 ns Inductive Storage Time Typ

• Low Saturation Voltage:

  0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive

• Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — VCES

• High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits — 8.0 Volts Min