MJH16006

功率晶体管 POWER TRANSISTORS

NPN Silicon Power Transistor

1 kV SWITCHMODE™ Series

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications.

Features:

• Collector–Emitter Voltage — VCEV = 1000 Vdc

• Fast Turn–Off Times

• 80 ns Inductive Fall Time — 100°C Typ

• 120 ns Inductive Crossover Time — 100°C Typ

• 800 ns Inductive Storage Time — 100°C Typ

• 100°C Performance Specified for:

    Reverse–Biased SOA with Inductive Load

    Switching Times with Inductive Loads

    Saturation Voltages

    Leakage Currents

• Extended FBSOA Rating Using Ultra–fast Rectifiers

• Extremely High RBSOA Capability

Typical Applications:

• Switching Regulators

• Inverters

• Solenoids

• Relay Drivers

• Motor Controls

• Deflection Circuits