W9864G6JH-6

Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.4INCH, ROHS COMPLIANT, TSSOP2-54

GENERAL DESCRIPTION

W9864G6JH is a high-speed synchronous dynamic random access memory SDRAM, organized as 1M words x 4 banks x 16 bits. W9864G6JH  delivers a data bandwidth of up to 200M words per second. For different application, W9864G6JH is sorted into the following speed grades: -5/-6/-6I/-6A/-7/-7S. The -5 parts can run up to 200MHz/CL3.  The -6/-6I/-6A  parts can run up to 166MHz/CL3  the -6I industrial grade,  -6A automotive grade which  is guaranteed to support -40°C  ~ 85°C.  The  -7/-7S parts can run up to 143MHz/CL3 and with tRP= 18nS.

FEATURES

3.3V± 0.3V for -5/-6/-6I/-6A speed grades power supply

2\. 7V~3.6V for -7/-7S speed grades power supply

1,048,576 words 4 banks  16 bits organization

Self Refresh Current: Standard and Low Power

CAS Latency: 2 & 3

Burst Length: 1, 2, 4, 8 and full page

Sequential and Interleave Burst

Byte data controlled by LDQM, UDQM

Auto-precharge and controlled precharge

Burst read, single write operation

4K refresh cycles/64mS

Interface: LVTTL

Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS complian