BUK954R8-60E

NXP  BUK954R8-60E  晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 5 V, 1.7 V

The is a N-channel logic level MOSFET in a package using TrenchMOS technology, designed for use in high performance automotive applications. Suitable for thermally demanding environments due to 175°C rating. True logic level gate with VGSth rating of greater than 0.5V at 175°C.

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Repetitive avalanche rated

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590A Peak source current

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AEC-Q101 Qualified