IXFH12N120P

IXYS SEMICONDUCTOR  IXFH12N120P  功率场效应管, MOSFET, N沟道, 12 A, 1.2 kV, 1.35 ohm, 10 V, 6.5 V

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

VDSS = 1200V

ID25 = 12A

RDSon ≤ 1.35Ω

trr ≤ 300ns

Features

International standard packages

Fast recovery diode

Unclamped Inductive Switching UIS rated

Low package inductance

  - easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

Applications:

High Voltage Switched-mode and resonant-mode power supplies

High Voltage Pulse Power Applications

High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators

High Voltage DC-DC converters

High Voltage DC-AC inverters