IGW60T120FKSA1

INFINEON  IGW60T120FKSA1  单晶体管, IGBT, 60 A, 2.4 V, 375 W, 1.2 kV, TO-247, 3 引脚

TrenchStop IGBT ，电压 1100 至 1600V

一系列 Infineon 的 IGBT 晶体管，带电压额定值为 1100 至 1600V 的集电极-发射极，采用 TrenchStop™ 技术。该系列包括带集成高速、快速恢复防并联二极管的设备。

• 集电极-发射极电压范围 1100 至 1600V

• 极低 VCEsat

• 低关闭损耗

• 短尾线电流

• 低 EMI

• 最高接点温度 175°C

得捷:
IGBT TRENCH 1200V 100A TO247-3

欧时:
Infineon IGW60T120FKSA1 N沟道 IGBT, Vce=1200 V, 100 A, 1MHz, 3引脚 TO-247封装

贸泽:
IGBT Transistors LOW LOSS IGBT TECH 1200V 60A

艾睿:
This IGW60T120FKSA1 IGBT transistor from Infineon Technologies is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 375000 mW. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C. It is made in a single configuration.

Chip1Stop:
Trans IGBT Chip N-CH 1200V 100A 375000mW 3-Pin3+Tab TO-247 Tube

Verical:
Trans IGBT Chip N-CH 1200V 100A 375000mW 3-Pin3+Tab TO-247 Tube

Newark:
IGBT Single Transistor, 60 A, 2.4 V, 375 W, 1.2 kV, TO-247, 3

罗切斯特:
Trans IGBT Chip N-CH 1.2KV 100A 3-Pin3+Tab TO-247