IRF720B

400V N沟道MOSFET 400V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using ’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

Features

• 3.3A, 400V, RDSon = 1.75Ω @VGS = 10 V

• Low gate charge typical 14 nC

• Low Crss typical 11 pF

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability