AIKB20N60CTATMA1

单晶体管, IGBT, 40 A, 1.5 V, 156 W, 600 V, TO-263, 3 引脚

Summary of Features:

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Very low V CEsat 1.5V typ.

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Maximum junction temperature 175°C

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Short circuit withstand time 5µs

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Positive temperature coefficient in V CEsat

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Low EMI

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Low gate charge

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Green package

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Very soft, fast recovery anti-parallel Emitter Controlled HE diode