TGF2023-2-02

射频结栅场效应晶体管RF JFET晶体管 DC-18GHZ 12W TQGaN25 PAE 73.3% Gain 21dB

The TriQuint is a discrete 2.5 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint"s proven 0.25 um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The device typically provides 41 dBm of saturated output power with power gain of 18dB at 3 GHz. The maximum power added efficiency is 58% which makes the TGF2023-2-02 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

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Frequency range: DC to 18 GHz * 41 dBm nominal Psat at 3 GHz * 58% maximum PAE * 18 dB nominal power gain * Bias: Vd = 28 to 32 V, Idq = 250 mA, Vg = -3.6 V typical * Technology: 0.25 um Power GaN on SiC * Chip dimensions: 0.82 x 0.92 x 0.10 mm