2N7000TA

FAIRCHILD SEMICONDUCTOR  2N7000TA  晶体管, MOSFET, N沟道, 200 mA, 60 V, 5 ohm, 10 V, 3.9 V

The is a N-channel enhancement mode Field Effect Transistor is produced using high cell density and DMOS technology. It minimize on-state resistance while providing rugged, reliable and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low-voltage, low-current applications, such as small servo motor control, power MOSFET gate drivers and other switching applications.

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Fast switching

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Lower input capacitance

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Extended safe operating area

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Improved inductive ruggedness

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Improved high temperature reliability