IPB180N04S401ATMA1

INFINEON  IPB180N04S401ATMA1  晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0011 ohm, 10 V, 3 V

表面贴装型 N 通道 180A（Tc） 188W（Tc） PG-TO263-7-3

得捷:
MOSFET N-CH 40V 180A TO263-7

立创商城:
N沟道 40V 180A

贸泽:
MOSFET N-CHANNEL_30/40V

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB180N04S401ATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 188000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

Verical:
Trans MOSFET N-CH 40V 180A Automotive 7-Pin6+Tab D2PAK T/R

Newark:
# INFINEON  IPB180N04S401ATMA1  MOSFET Transistor, N Channel, 180 A, 40 V, 0.0011 ohm, 10 V, 3 V