SI3590DV-T1-GE3

VISHAY  SI3590DV-T1-GE3  双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.062 ohm, 4.5 V, 1.5 V

The is a 30V Dual N and P-channel TrenchFET® Power MOSFET. Ultra low RDSon for high Efficiency and optimized for high side and low side operation. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.

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Halogen-free according to IEC 61249-2-21 definition

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Low conduction losses