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SQS401EN-T1-GE3

VISHAY  SQS401EN-T1-GE3  晶体管, MOSFET, P沟道, -16 A, -40 V, 0.02 ohm, -10 V, -2 V

The is a -40V P-channel TrenchFET® Power MOSFET. The P-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.

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Halogen-free according to IEC 61249-2-21 definition
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AEC-Q101 qualified
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100% Rg Tested
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100% UIS Tested
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800V ESD protection
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175°C Operating temperature

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