BSZ340N08NS3GATMA1

INFINEON  BSZ340N08NS3GATMA1  晶体管, MOSFET, N沟道, 23 A, 80 V, 0.027 ohm, 10 V, 2.8 V

OptiMOS™3 功率 MOSFET，60 至 80V

OptiMOS™ 产品提供高性能封装，可处理最具挑战性的应用，在有限空间提供全部灵活性。 这些 Infineon 产品经的设计符合并超过计算机应用中更严格的下一代电压调节标准的能效和功率密度要求。

快速切换 MOSFET，用于 SMPS

优化技术，用于直流/直流转换器

符合目标应用的 JEDEC1 规格

N 通道，逻辑电平

极佳的栅极电荷 x R DSon 产品 FOM

极低导通电阻 R DSon

无铅电镀

得捷:
MOSFET N-CH 80V 6A/23A 8TSDSON

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET BSZ340N08NS3GATMA1, 23 A, Vds=80 V, 8引脚 TSDSON封装

贸泽:
MOSFET N-Ch 80V 23A TSDSON-8 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 80 V, 23 A, 0.027 ohm, PG-TSDSON, 表面安装

艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The BSZ340N08NS3GATMA1 power MOSFET from Infineon Technologies provides the solution. Its maximum power dissipation is 2100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 80V 6A 8-Pin TSDSON EP

Chip1Stop:
Trans MOSFET N-CH 80V 6A 8-Pin TSDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 80V; 23A; 32W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 80V 6A Automotive 8-Pin TSDSON EP T/R

Newark:
# INFINEON  BSZ340N08NS3GATMA1  MOSFET Transistor, N Channel, 23 A, 80 V, 0.027 ohm, 10 V, 2.8 V