RN4989FE

RN4989FE 复合带阻尼NPN+PNP三极管 50V 0.1A R1=47KΩ R2=22KΩ 250MHZ SOT563 代码 6J

集电极-基极反向击穿电压VBRCBO Collector-Base VoltageVCBO | 50V/-50V \---|--- 集电极-发射极反向击穿电压VBRCEO Collector-Emitter VoltageVCEO | 50V/-50V 集电极连续输出电流IC Collector CurrentIC | 100mA/-0.1A Q1基极输入电阻R1 Input ResistanceR1 | 47 kΩ Q1基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 22 kΩ Q1电阻比R1/R2 Q1 Resistance Ratio | 2.14 Q2基极输入电阻R1 Input ResistanceR1 | 47 kΩ Q2基极-发射极输入电阻R2 Base-Emitter ResistanceR2 | 22 kΩ Q2电阻比R1/R2 Q2 Resistance Ratio | 2.14 直流电流增益hFE DC Current GainhFE | 70 截止频率fT Transtion FrequencyfT | 250MHZ 耗散功率Pc Power Dissipation | 100mW/0.1W Description & Applications | TOSHIBA Transistor Silicon NPN

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PNP Epitaxial Type PCT Process Bias Resistor Built-in Transistor . * Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications * Two devices are incorporated into an Extreme-Super-Mini 6-pin package. * Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. 描述与应用 | 的硅NPN*PNP外延型的（PCT工艺）（内置偏置电阻晶体管）。 *开关，逆变电路，接口电路，驱动器电路应用 *两个偏置电阻晶体管纳入一个超迷你封装。 *偏置电阻晶体管，减少了部件数量。能制造更加紧凑的设备，并降低装配成本。