IPB60R099C6ATMA1

INFINEON  IPB60R099C6ATMA1  功率场效应管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V

CoolMOS™C6/C7 功率 MOSFET

得捷:
MOSFET N-CH 600V 37.9A D2PAK

立创商城:
N沟道 600V 37.9A

欧时:
Infineon CoolMOS C6 系列 Si N沟道 MOSFET IPB60R099C6ATMA1, 38 A, Vds=600 V, 3引脚 D2PAK TO-263封装

贸泽:
MOSFET HIGH POWER_LEGACY

e络盟:
晶体管, MOSFET, N沟道, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V

艾睿:
Make an effective common gate amplifier using this IPB60R099C6ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 278000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes coolmos technology. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 600V 37.9A 4-Pin TO-263 T/R

TME:
Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3

Verical:
Trans MOSFET N-CH 600V 37.9A 3-Pin2+Tab D2PAK T/R

Newark:
MOSFET Transistor, N Channel, 37.9 A, 650 V, 0.09 ohm, 10 V, 3 V