RJH60F7ADPK-00#T0

* Low collector to emitter saturation voltage * VCEsat = 1.35V typ. at IC = 50A, VGE = 15V, Ta = 25℃ * Built in fast recovery diode in one package * Trench gate and thin wafer technology * High speed switching * tf = 74ns typ. at IC = 30A, VCE = 400V, VGE = 15V, Rg = 5Ω, Ta = 25℃, inductive load

This IGBT transistor from Renesas will work perfectly in your circuit. Its maximum power dissipation is 328900 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

得捷:
IGBT 600V 90A 328.9W TO-3P

艾睿:
Trans IGBT Chip N-CH 600V 90A 3-Pin3+Tab TO-3P Box

安富利:
* Low collector to emitter saturation voltage * VCEsat = 1.35 V typ. at IC = 50 A, VGE = 15 V, Ta = 25°C * Built in fast recovery diode in one package * Trench gate and thin wafer technology * High speed switching * tf = 74 ns typ. at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 Ω, Ta = 25°C, inductive load

Chip1Stop:
Trans IGBT Chip N-CH 600V 90A 3-Pin3+Tab TO-3P Box

Verical:
Trans IGBT Chip N-CH 600V 90A 3-Pin3+Tab TO-3P Box

DeviceMart:
IGBT 600V 90A 328.9W TO-3P