MTD2955VT4
功率MOSFET的12A , 60V P沟道DPAK Power MOSFET 12A, 60V P-Channel DPAK
最大源漏极电压VdsDrain-Source Voltage| -60V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -12A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.185Ω @6A,10V 开启电压Vgs(th)Gate-Source Threshold Voltage| 2.0-4.0V 耗散功率PdPower Dissipation| 2.1W Description & Applications| Features • Avalanche Energy Specified • IDSS and VDSon Specified at Elevated Temperature • Pb−Free Packages are Available 描述与应用| •雪崩能量 •IDSS和VDS(上) 指定高温 •无铅包可用
得捷:
MOSFET P-CH 60V 12A DPAK
艾睿:
Trans MOSFET P-CH 60V 12A 3-Pin2+Tab DPAK T/R
Win Source:
Power MOSFET 12A, 60V P-Channel DPAK