APT35GP120J

Trans IGBT Chip N-CH 1200V 64A 284000mW 4Pin SOT-227

The IGBT transistor from will work effectively even with higher currents. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 284000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.