2SK1530
N CHANNEL MOS TYPE HIGH POWER AMPLIFIER APPLICATION
High-Power Amplifier Application
High breakdown voltage : VDSS = 200 V
High forward transfer admittance : |Yfs| = 5.0 S typ.
Complementary to 2SJ201
2SK1530 PDF数据文档
| 图片 | 型号 | 厂商 | 下载 |
|---|---|---|---|
 | 2SK1530 | Toshiba 东芝 | |
| 2SK1824 | NEC 日本电气 | |
 | 2SK1058-E | Renesas Electronics 瑞萨电子 | |
 | 2SK1740-4-TB-E | ON Semiconductor 安森美 | |
| 2SK1764KYTL-E | Renesas Electronics 瑞萨电子 | |
 | 2SK1340-E | Renesas Electronics 瑞萨电子 | |
 | 2SK1341-E | Renesas Electronics 瑞萨电子 | |
 | 2SK1317-01-E | Renesas Electronics 瑞萨电子 | |
 | 2SK1342-E | Renesas Electronics 瑞萨电子 | |
| 2SK1169 | Renesas Electronics 瑞萨电子 | |
 | 2SK1775-E | Renesas Electronics 瑞萨电子 |