NTHC5513T1G

ON SEMICONDUCTOR  NTHC5513T1G  双路场效应管, MOSFET, N和P沟道, 2.9 A, 20 V, 0.058 ohm, 4.5 V, 600 mV

最大源漏极电压VdsDrain-Source Voltage| 20V/-20V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 12V/12V 最大漏极电流IdDrain Current| 2.9A/-2.2A 源漏极导通电阻RdsDrain-Source On-State Resistance| 115mΩ@ VGS =2.5V, ID =2.3A/240mΩ@ VGS =-2.5V, ID =-2.7A 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.6~1.2V/-0.6~-1.2V 耗散功率PdPower Dissipation| 1.1W Description & Applications| Power MOSFET Features • Complementary N−Channel and P−Channel MOSFET • Small Size, 40% Smaller than TSOP−6 Package • Leadless SMD Package Featuring Complementary Pair • Chip FET Package Provides Great Thermal Characteristics Similar to Larger Packages • Low RDSon in a ChipFET Package for High Efficiency Performance • Low Profile < 1.10 mm Allows Placement in Extremely Thin Environments Such as Portable Electronics • Pb−Free Package is Available Applications • Load Switch Applications Requiring Level Shift • DC−DC Conversion Circuits • Drive Small Brushless DC Motors • Designed for Power Management Applications in Portable, Battery Powered Products 描述与应用| 功率MOSFET 特点 •互补N-通道和P-通道MOSFET •小尺寸，40％小于TSOP-6封装 •无铅SMD封装，拥有互补配对 •FET封装芯片提供了极大的热特性类似大包 •低RDS（ON）ChipFET包装在一个高效率的性能 •薄型（<1.10毫米）允许放置在极薄环境，如便携式电子产品 •无铅包装是可用 应用 •负载开关应用的需要电平转换 •DC-DC转换电路 •驱动器小型无刷直流电动机 •专为便携式，电池供电产品的电源管理应用