DS1265W-100IND+

MAXIM INTEGRATED PRODUCTS  DS1265W-100IND+  芯片, 存储器, NVRAM

The is a 3.3V 8Mb non-volatile SRAM in 36 pin EDIP package. This device is organized as 1,048,576 words by 8-bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption.

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Supply voltage range is 3V to 3.6V

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10 years minimum data retention in the absence of external power

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Data is automatically protected during power loss

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Unlimited write cycles, low power consumption

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Read and write access times of 100ns

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No additional support circuitry is required for microprocessor interfacing

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Operating temperature range from -40°C to 85°C