2SD2240-R

2SD2240-R NPN三极管 150V 100mA/0.1A 150MHz 130~220 1V SOT-523/SC-75 marking/标记 PR 高击穿电压低噪声放大

集电极-基极反向击穿电压VBRCBOCollector-Base VoltageVCBO| 150V \---|--- 集电极-发射极反向击穿电压VBRCEOCollector-Emitter VoltageVCEO| 150V 集电极连续输出电流ICCollector CurrentIC| 100mA/0.1A 截止频率fTTranstion FrequencyfT| 150MHz 直流电流增益hFEDC Current GainhFE| 130~220 管压降VCE（sat）Collector-Emitter Saturation Voltage| 1V 耗散功率PcPower Dissipation| 125mW/0.125W Description & Applications| Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise amplification Features High collector to emitter voltage VCEO. Low noise voltage NV. and automatic insertion through the tape packing 描述与应用| NPN硅外延平面型 对于高击穿电压的低频和低噪声放大 特点 高集电极发射极电压VCEO。 低噪声电压NV。 通过自动插入磁带包装