NTJD1155LT1G

ON SEMICONDUCTOR  NTJD1155LT1G  场效应管, MOSFET, P沟道, -8V, SC-88

双 N/P 通道 MOSFET，

### MOSFET ，ON Semiconductor

得捷:
MOSFET N/P-CH 8V 1.3A SOT363

欧时:
ON Semiconductor 双 Si N/P沟道 MOSFET NTJD1155LT1G, 1.3 A, Vds=8 V, 6引脚 SOT-363 SC-88封装

贸泽:
MOSFET 8V +/-1.3A P-Channel w/Level Shift

e络盟:
双路场效应管, MOSFET, 互补N与P沟道, 8 V, 1.3 A, 0.13 ohm, SC-88, 表面安装

艾睿:
If you need to either amplify or switch between signals in your design, then ON Semiconductor&s;s NTJD1155LT1G power MOSFET is for you. Its maximum power dissipation is 400 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes tmos technology. This N|P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N/P-CH 8V 6-Pin SC-88 T/R

Chip1Stop:
Trans MOSFET N/P-CH 8V 6-Pin SC-88 T/R

TME:
IC: power switch; high-side switch; 1.3A; Channels:1; P-Channel

Verical:
Power Switch Hi Side 1-OUT 1A 0.26Ohm 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  NTJD1155LT1G  MOSFET Transistor, P Channel, 1.3 A, -8 V, 175 mohm, -4.5 V, 1 V

力源芯城:
-8V,-1.3A功率MOSFET

Win Source:
MOSFET N/P-CH 8V 1.3A SOT-363

DeviceMart:
MOSFET N+P 8V 1.3A SOT-363