IRFR120N

MOSFET, Power; N-Ch; VDSS 100V; RDSON 0.21Ω; ID 9.4A; D-Pak TO-252AA; PD 48W

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performace due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. • 2.7A, 200V, RDSon = 1.5Ω @VGS = 10 V • Low gate charge typical 7.2 nC • Low Crss typical 6.8 pF • Fast switching • 100% avalanche tested • Improved dv/dt capability