2SK2845

2SK2845 N沟道场效应管 900V 1A TO252 代码 K2845 增强模式

最大源漏极电压VdsDrain-Source Voltage | 900V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage | ±30V 最大漏极电流IdDrain Current | 1A 源漏极导通电阻RdsDrain-Source On-State Resistance | 8.0Ω~9.0Ω VGS=10 V,ID=0.5A 开启电压Vgs（th）Gate-Source Threshold Voltage | Vth = 2.0 to 4.0 V VDS = 10 V, ID = 1 mA 耗散功率PdPower Dissipation | 40W Description & Applications | TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII. Chopper Regulator, DC/DC Converter and Motor Drive. Applications.

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MOSFET N-CH 900V 1A DP