S29AL004D90TFI010
SPANSION S29AL004D90TFI010 Flash Memory, 4Mbit, 512K x 8Bit / 256K x 16Bit, TSOP, 48Pins
General Description
The S29AL004D is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data x16 appears on DQ15–DQ0; the byte-wide x8 data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.
Distinctive Characteristics
Architectural Advantages
■ Single power supply operation
— 2.7 to 3.6 volt read and write operations for battery powered applications
■ Manufactured on 200nm process technology
— Compatible with 320nm Am29LV400B and MBM29LV400T/BC
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors byte mode
— One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors word mode
— Supports full chip erase
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing multiple program command sequences
■ Top or bottom boot block configurations available
■ Embedded Algorithms
— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
— Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-power supply Flash
— Superior inadvertent write protection
■ Sector Protection features
— A hardware method of locking a sector to prevent any program or erase operations within that sector
— Sectors can be locked in-system or via programming equipment
— Temporary Sector Unprotect feature allows code changes in previously locked sectors
Performance Characteristics
■ High performance
— Access times as fast as 70 ns
■ Ultra low power consumption typical values at 5 MHz
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
■ Cycling Endurance: 1,000,000 cycles per sector typical
■ Data Retention: 20 years typical Package Options
■ 48-ball FBGA
■ 48-pin TSOP
■ 44-pin SO
Software Features
■ Data# Polling and toggle bits
— Provides a software method of detecting program or erase operation completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
Hardware Features
■ Ready/Busy# pin RY/BY#
— Provides a hardware method of detecting program or erase cycle completion
■ Hardware reset pin RESET#
— Hardware method to reset the device to reading array data