APT30M85BVRG

功率半导体功率模块 Power Semiconductors Power Modules

In addition to amplifying electronic signals, you"ll be able to switch between various lines with the power MOSFET, developed by . Its maximum power dissipation is 300000 mW. This device is made with power mos v technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.