STD6N65M2

STMICROELECTRONICS  STD6N65M2  功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V

The is a MDmesh™ N-channel Power MOSFET offers Zener-protection and extremely low gate charge. This Power MOSFET developed using MDmesh™ M2 technology which has strip layout and improved vertical structure, the device exhibits low ON-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

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100% Avalanche tested